2SB1188T100R Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1188T100R Datasheet PDF : 3 Pages
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Transistors
2SB1188 / 2SB1182 / 2SB1240
Medium power transistor (−32V, −2A)
2SB1188 / 2SB1182 / 2SB1240
!Features
1) Low VCE(sat).
VCE(sat) = −0.5V (Typ.)
(IC/IB = −2A / −0.2A)
2) Complements the 2SD1766 /
2SD1758 / 2SD1862
!Structure
Epitaxial planar type
PNP silicon transistor
!External dimensions (Units : mm)
2SB1188
2SB1182
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
6.5±0.2
5.1+−00..21
C0.5
2.3+−00..21
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4
+0.1
−0.05
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol: BC∗
2SB1240
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
!Absolute maximum ratings (Ta=25°C)
∗ Denotes hFE
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
−40
−32
−5
−2
−3
0.5
2SB1188
Collector power
2
PC
dissipation
2SB1182
10
2SB1240
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55~+150
∗1 Single pulse, PW=100ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
(1) Emitter
(2) Collector
(3) Base
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
W ∗2
W(TC=25°C)
W ∗3
°C
°C
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