NTZD3155C(2007) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NTZD3155C Datasheet PDF : 8 Pages
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NTZD3155C
P-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
250
VGS = 0 V
200
150 CISS
TJ = 25°C
100
COSS
50
CRSS
0
0
5
10
15
20
DRAIN-T O-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
5
QT
4
-V DS
3
2
QGS
1
QGD
0
0 0.2 0.4 0.6 0.8 1
10
9
8
-V GS
7
6
5
4
3
2
ID = -0.215 A
TJ = 25°C
1
0
1.2 1.4 1.6 1.8 2
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
100
td(OFF)
tf
10
tr
td(ON)
VDD = -10 V
ID = -0.215 A
VGS = -4.5 V
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.6
VGS = 0 V
TJ = 25°C
0.4
0.2
0
0.3
0.4
0.5
0.6
0.7
0.8 0.9
-V SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
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