SIA430DJ-T4-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SIA430DJ-T4-GE3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTIC (25 °C, unless otherwise noted)
40
5
VGS = 10 V thru 5 V
VGS = 4 V
32
4
SiA430DJ
Vishay Siliconix
TC = - 55 °C
24
16
8
0
0.0
0.025
VGS = 3 V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
0.015
0.010
VGS = 4.5 V
VGS = 10 V
0.005
0
8
16
24
32
40
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 12 A
8
6
4
VDS = 10 V
VDS = 5 V
VDS = 15 V
3
TC = 125 °C
2
1
TC = 25 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
Ciss
800
600
400
Coss
200
Crss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 7 A
1.4
VGS = 10 V
1.2
1.0
2
0.8
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68685
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0116-Rev. B, 21-Jan-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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