SIA430DJ(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

SIA430DJ
(Rev.:2008)

N-Channel 20-V (D-S) MOSFET

Vishay Semiconductors 

SiA430DJ

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.055

10

TJ = 150 °C

1

TJ = 25 °C

0.045

0.035

ID = 5 A

0.1

0.01

TJ = - 50 °C

0.001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.3

0.025

0.015

TJ = 125 °C

0.005

TJ = 25 °C

0 1 2 3 4 5 6 7 8 9 10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

30

0.1

25

- 0.1

20

ID = 1 mA

15

- 0.3

10

ID = 250 µA

- 0.5

5

- 0.7

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

0.001 0.01 0.1

1

10

100 1000

Time (s)

Single Pulse Power (Junction-to-Ambient)

100

Limited by RDS(on)*

10

10 µs

100 µs

1 ms

1

10 ms

100 ms

0.1

TA = 25 °C

Single Pulse

DC

BVDSS

Limited

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

www.vishay.com

4

Document Number: 68685

S-81173-Rev. A, 26-May-08

Share Link: