STE140NF20D Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STE140NF20D

N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package

STMicroelectronics 

STE140NF20D

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 100 V, ID= 70 A,

RG=4.7 Ω, VGS =10 V

(see Figure 15)

Min. Typ. Max. Unit

232

ns

218

ns

-

-

283

ns

250

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 140 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 140 A,

di/dt = 100 A/µs,

VDD= 60 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 140 A,

di/dt = 100 A/µs,

VDD= 60 V, Tj=150 °C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

140 A

-

560 A

-

1.5 V

190

ns

- 1.4

nC

14

A

257

ns

- 2.4

µC

18

A

Doc ID 15299 Rev 4

5/13

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