WFR630 Ver la hoja de datos (PDF) - Wisdom technologies
Número de pieza
componentes Descripción
Fabricante
WFR630 Datasheet PDF : 7 Pages
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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250µ s Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.2
0.9
VGS = 10V
VGS = 20V
0.6
0.3
※ Note : TJ = 25℃
0.0
0
4
8
12
16
20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Ciss
※ Notes :
600
Coss
1. VGS = 0 V
2. f = 1 MHz
400
Crss
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
150℃
25℃
10-1
2
-55℃
※ Notes :
1. V = 40V
DS
2. 250µ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 40V
10
VDS = 100V
8
VDS = 160V
6
4
2
※ Note : ID = 9A
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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