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VN5025AJ-E

Single channel high side driver with analog sense for automotive applications

STMicroelectronics 

Electrical specifications

VN5025AJ-E

Table 10. Current sense (8V<VCC<16V) (continued)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

dK2/K2(1)

Current Sense ratio

drift

IOUT=3 A; VSENSE= 4 V;

VCSD=0V;

TJ= -40 °C to 150 °C

-7

7%

K3

IOUT/ISENSE

IOUT= 10A; VSENSE=4V; VCSD=0V;

Tj= -40°C...150°C

Tj=25°C...150°C

2700 2860 3050

2700 2860 3050

dK3/K3(1)

Current Sense ratio

drift

IOUT= 10 A; VSENSE= 4 V;

VCSD=0V;

TJ= -40 °C to 150 °C

-4

4%

ISENSE0

Analog Sense

leakage current

IOUT=0A; VSENSE=0V;

VCSD=5V; VIN=0V;

Tj=-40°C...150°C

0

VCSD=0V; VIN=5V;

Tj=-40°C...150°C

0

IOUT=2A; VSENSE=0V;

VCSD=5V; VIN=5V; Tj=-40°C...150°C 0

1 µA

2 µA

1 µA

Openload On state

IOL

current detection

VIN = 5V, ISENSE= 5 µA

threshold

5

30 mA

Max analog Sense

VSENSE output voltage

IOUT=3A; VCSD=0V

5

V

VSENSEH

Analog Sense

output voltage in

overtemperature

condition

VCC=13V; RSENSE=3.9KΩ

9

V

ISENSEH

Analog Sense

output current in

overtemperature

condition

VCC=13V; VSENSE=5V

8

mA

Delay response time VSENSE<4V, 0.5<Iout<10A

tDSENSE1H from falling edge of ISENSE=90% of ISENSE max

CS_DIS pin

(see Figure 4)

50 100 µs

tDSENSE1L

Delay response time

from rising edge of

CS_DIS pin

VSENSE<4V, 0.5<Iout<10A

ISENSE=10% of ISENSE max

(see Figure 4)

5 20 µs

Delay response time VSENSE<4V, 0.5<Iout<10A

tDSENSE2H from rising edge of ISENSE=90% of ISENSE max

INPUT pin

(see Figure 4)

70 300 µs

12/31

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