UT2327
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
- 20
V
Gate-Source Voltage
VGS
± 12
V
Continuous Drain Current (Note 3)
Ta=25℃
Ta=70℃
ID
-2.6
A
-2.1
A
Pulsed Drain Current (Note 1, 2)
Total Power Dissipation (Ta=25℃)
Junction Temperature
Storage Temperature
IDM
-10
A
PD
1.38
W
TJ
+150
℃
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL MIN
θJA
TYP
MAX
90
UNIT
℃ /W
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=-250uA
-20
Drain-Source Leakage Current
TJ=25℃
TJ=70℃
IDSS
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±12V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25℃, ID=-1mA
-0.1
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250uA
-0.5
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-5V, ID=-2.8A
VGS=-2.8V, ID=-2.0A
Forward Transconductance
gFS
VDS=-5V, ID=-2.8A
4.4
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
295
COSS
VGS=0V, VDS=-6V, f=1.0MHz
170
Reverse Transfer Capacitance
CRSS
65
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
tD(ON)
5.2
tR
VDS=-15V, VGS=-10V,
9.7
tD(OFF) ID=-1A, RG=6Ω, RD=15Ω
19
Turn-OFF Fall Time
tF
29
Total Gate Charge (Note 2)
Gate-Source Charge
QG
QGS
VDS=-6V, VGS=-5V, ID=-2.8A
5.2
1.36
Gate-Drain Charge
QGD
0.6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
TJ=25℃, IS=-1.6A, VGS=0V
Maximum Continuous Drain-Source Diode
Forward Current
IS
VD=VG=0V, VS=-1.2V
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min.
MAX UNITS
V
-1 uA
-10 uA
±100 nA
V/℃
V
130 mΩ
190 mΩ
S
pF
pF
pF
ns
ns
ns
ns
10 nC
nC
nC
-1.2 V
-1 A
-10 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-108,A