UT2321G(2009) Ver la hoja de datos (PDF) - Unisonic Technologies

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componentes Descripción

Fabricante

UT2321G
(Rev.:2009)

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Unisonic Technologies 

UNISONIC TECHNOLOGIES CO., LTD

UT2321

P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

„ DESCRIPTION

The UT2321 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

„ FEATURES

* RDS(ON)<55mΩ @VGS=-4.5V

* RDS(ON)<80mΩ @VGS=-2.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

„ SYMBOL

3.Drain

Power MOSFET

2.Gate

1.Source

„ ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

UT2321L-AE3-R

UT2321G-AE3-R

Package

SOT-23

Pin Assignment

1

2

3

S

G

D

Packing

Tape Reel

„ MARKING

231

L: Lead Free

G: Halogen Free

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Copyright © 2009 Unisonic Technologies Co., Ltd

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