UPA1709G Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
UPA1709G Datasheet PDF : 8 Pages
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µ PA1709
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 4.5 A
RDS(on)2 VGS = 4.5 V, ID = 4.5 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
1.5
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 4.5 A
8.0
Drain Leakage Current
IDSS
VDS = 40 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = ±25 V, VDS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
tf
ID = 4.5 A
VGS(on) = 10 V
VDD = 20 V
RG = 10 Ω
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
QGS
QGD
VF(S-D)
ID = 9.0 A
VDD = 32 V
VGS = 10 V
IF = 9.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 9.0 A, VGS = 0 V
Qrr
di/dt = 100 A/ µ s
TYP.
9.3
13.8
2.0
14
1850
790
330
27
95
110
70
43.0
6.0
14.0
0.78
47
44
MAX.
12.5
20.0
2.5
10
±10
UNIT
mΩ
mΩ
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
RG = 10
VGS
0
t
t= 1 s
Duty Cycle 1 %
RL
VDD
VGS
Wave Form
ID
Wave Form
VGS
0 10 %
ID
0 10 %
VGS (on)
90 %
ID
90 %
90 %
10 %
td (on)
t t r
d (off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
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