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UPA1709G

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1709

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management

switch.

FEATURES

• Low on-resistance

RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A)

RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)

• Low Ciss : Ciss = 1850 pF (TYP.)

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1709G

Power SOP8

PACKAGE DRAWING (Unit : mm)

8

5

1

4

5.37 Max.

1,2,3 ; Source

4

; Gate

5,6,7,8 ; Drain

6.0 ±0.3

4.4

1.27 0.78 Max.

0.40

+0.10

–0.05

0.12 M

0.5 ±0.2

0.8

0.10

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

VDSS

40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±25

V

Drain Current (DC)

ID(DC)

±9.0

A

Drain Current (pulse) Note1

ID(pulse)

±36

A

Total Power Dissipation (TA = 25°C) Note2

PT

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to + 150

°C

Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 1200 mm2 x 0.7 mm

EQUIVARENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Document No. G13436EJ1V0DS00 (1st edition)

Date Published November 1998 NS CP(K)

Printed in Japan

©

1998

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