TSMF3710-GS18 Ver la hoja de datos (PDF) - Vishay Semiconductors
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TSMF3710-GS18 Datasheet PDF : 8 Pages
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TSMF3710
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Temp. coefficient of VF
IF = 100 mA
Reverse current
VR = 5 V
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Temp. coefficient of φe
IF = 100 mA
Angle of half intensity
Peak wavelength
IF = 100 mA
Spectral bandwidth
IF = 100 mA
Temp. coefficient of λp
IF = 100 mA
Rise time
IF = 100 mA
Fall time
IF = 100 mA
Virtual source size
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
200
150
R thJA
100
50
0
0
14846
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
Symbol
Min
VF
VF
TKVF
IR
Cj
Ie
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tf
∅
Typ.
1.5
2.3
-2.1
125
10
100
40
-0.35
±60
870
40
0.25
30
30
0.44
Max
Unit
1.8
V
V
mV/K
10
µA
pF
22
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
125
100
R thJA
75
50
25
0
0
20
40
60
80 100
14847
Tamb - Ambient Temperature (°C)
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 81088
Rev. 1.3, 21-Feb-07
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