TSMF3710-GS18 Ver la hoja de datos (PDF) - Vishay Semiconductors

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TSMF3710-GS18

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Vishay Semiconductors 

TSMF3710

Vishay Semiconductors

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double

Hetero

Description

TSMF3710 is a high speed infrared emitting diode in

GaAlAs double hetero (DH) technology in a miniature

PLCC-2 SMD package.

DH technology combines high speed with high radiant

power at wavelength of 870 nm.

Features

• High radiant power

• High speed tr = 30 ns

• High modulation band width fc = 12 MHz e3

• Peak wavelength λp = 870 nm

• High reliability

• Low forward voltage

• Suitable for high pulse current application

• Wide angle of half intensity

• Compatible with automatic placement equipment

• EIA and ICE standard package

• Suitable for infrared, vapor phase and wavesolder

process

• 8mm tape and reel standard: GS08 or GS18

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Parts Table

Part

TSMF3710-GS08

TSMF3710-GS18

Ordering code

TSMF3710-GS08

TSMF3710-GS18

94 8553

Applications

• High speed IR data transmission

• High power emitter for low space applications

• High performance transmissive or reflective sen-

sors

MOQ: 7500 pc

MOQ: 8000 pc

Remarks

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse voltage

Forward current

Peak forward current

Surge forward current

Power dissipation

tp/T = 0.5, tp = 100 µs

tp = 100 µs

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

t ≤ 10 sec

Thermal resistance junction/

ambient

Symbol

Value

Unit

VR

5

V

IF

100

mA

IFM

200

mA

IFSM

1

A

PV

170

mW

Tj

100

°C

Tamb

- 40 to + 85

°C

Tstg

- 40 to + 100

°C

Tsd

260

°C

RthJA

450

K/W

Document Number 81088

Rev. 1.3, 21-Feb-07

www.vishay.com

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