BD241C Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

BD241C

Complementary Silicon Power Transistors

ON Semiconductor 

BD241C (NPN), BD242B (PNP), BD242C (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

VCEO

Vdc

BD242B

80

BD241C, BD242C

100

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

(VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

(VCE = 100 Vdc, VEB = 0)

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

BD242B

BD241C, BD242C

BD242B

BD241C, BD242C

ICEO

ICES

IEBO

mAdc

0.3

mAdc

200

mAdc

1.0

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

25

10

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 0.6 Adc)

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

VCE(sat)

VBE(on)

Vdc

1.2

Vdc

1.8

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2. fT = |hfe| • ftest.

40

30

20

10

0

0 20 40 60 80 100 120 140 160

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

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