DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TPD1033 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
TPD1033 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
TPD1033F
Electrical Characteristics
(Unless otherwise specified, Tch = - 40 to 110°C, VDD = 8~18 V)
Characteristic
Operating supply voltage
Supply current
Input voltage
Input current
On-voltage
On-resistance
Output leakage current
Diagnosis output
voltage
“L” Level
Diagnosis output
current
“H” Level
Overcurrent protection
Thermal shutdown
Temperature
Hysteresis
Open detection resistance
Switching time
Symbol
VDD (opr)
IDD
VIH
VIL
IIN (1)
IIN (2)
VDS (ON)
RDS (ON)
IOL
Test
Cir-
Test Condition
cuit
VDD = 12 V, VIN = 0 V
VDD = 12 V, IO = 2 A
VDD = 12 V, IO = 1.2 mA
VDD = 12 V, VIN = 5 V
VDD = 12 V, VIN = 0 V
VDD = 12 V, IO = 2 A,
Tch = 25°C
VDD = 12 V, IO = 2 A,
Tch = 25°C
VDD = 18 V, VIN = 0 V
VDL
VDD = 12 V, IDL = 2 mA
IDH
IS (1)
Note 3
IS (2)
Note 4
Ts
ΔTs
Rops
tON
tOFF
VDD = 18 V, VDH = 18 V
1
VDD = 12 V, Tch = 25°C
2
VDD = 8 V
3 VDD = 12 V, RL = 5,
3 Tch = 25°C
Min Typ. Max Unit
5
12
18
V
1
5
mA
3.5
V
1.5
V
50 200 μA
-0.2
0.2
μA
0.44
V
0.22
1.2 mA
0.4
V
10
μA
4
6
8
A
4
8
12
A
150 160 200 °C
10
°C
1
20 100 k
10 100
μs
10
30
μs
Note 3: Overcurrent detection value when load is short circuited and VIN = “L” “H”
Note 4: Overcurrent detection value when load current is increased while VIN = “H”
5
2006-10-31

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]