TLP331(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TLP331 Datasheet PDF : 8 Pages
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Reverse current
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector-base breakdown voltage
(TLP331)
Emitter-base breakdown voltage
(TLP331)
Collector dark current
Collector dark current
(TLP331)
Collector dark current
(TLP331)
VF
IF = 10mA
IR
VR = 5V
CT
V = 0, f = 1MHz
V(BR)CEO IC = 0.5mA
V(BR)ECO IE = 0.1mA
V(BR)CBO IC = 0.1mA
V(BR)EBO IE = 0.1mA
ICEO
ICER
VCE = 24V
VCE = 24V, Ta = 85°C
VCE = 24V, Ta = 85°C
RBE = 1MΩ
ICBO VCB = 10V
DC forward current gain
(TLP331)
hFE VCE = 5V, IC = 0.5mA
Capacitance (collector to emitter)
CCE V = 0 , f = 1MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Low input CTR
Base photo-current (TLP331)
Collector-emitter
saturation voltage
Symbol
Test Condition
IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
IC / IF(low)
IF = 0.5mA, VCE = 1.5V
Rank BV
IPB
VCE(sat)
IF = 1mA, VCB = 5V
IC = 0.5mA IF = 1mA
IC = 1mA IF = 1mA
Rank BV
Coupled Electrical Characteristics (Ta = 25~75°C)
Characteristic
Current transfer ratio
Low input CTR
Symbol
Test Condition
IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
IC / IF(low)
IF = 0.5mA, VCE = 1.5V
Rank BV
TLP331,TLP332
Min. Typ. Max. Unit
1.0 1.15 1.3
V
―
―
10
µA
―
30
―
pF
55
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10
100
nA
―
2
50
µA
―
0.5
10
µA
―
0.1
―
nA
― 1000 ―
―
―
12
―
pF
Min. Typ. Max. Unit
100
―
1200
%
200
―
1200
50
―
―
%
100
―
―
―
10
―
µA
―
—
0.4
―
0.2
―
V
―
―
0.4
Min. Typ. Max. Unit
50
―
―
%
100
―
―
―
50
―
%
―
100
―
3
2002-09-25
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