TLP168J Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TLP168J Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off-state current
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Critical rate of rise of
commutating voltage
Symbol
VF
IR
CT
IDRM
VTM
IH
dv / dt
Test Condition
IF=10 mA
VR = 3 V
VF = 0 V, f = 1 MHz
VDRM = 600 V
ITM = 70 mA
―
Vin = 240 Vrms, Ta = 85 °C
dv / dt(c) Vin = 60 Vrms, IT = 15 mA
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
IFT
VIH
IIH
Cs
RS
BVS
Test Condition
VT = 3V
IF = Rated IFT
IF = Rated IFT
VT = Rated VDRM
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. ≤ 60 %
AC, 60 s
TLP168J
Min Typ. Max Unit
1.2 1.4 1.7
V
―
―
10
μA
―
30
―
pF
―
10 1000 nA
―
1.7 2.8
V
―
0.6
―
mA
200 500
― V / μs
―
0.2
― V / μs
Min Typ.
―
―
―
―
―
200
―
5×1010
2500
0.8
1014
―
Max Unit
3
mA
50
V
600 μA
―
pF
―
Ω
― Vrms
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-10
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