TL054IN Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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TL054IN Datasheet PDF : 67 Pages
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TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
PARAMETER MEASUREMENT INFORMATION
VCC+
VI
VCC–
CL
(see Note A)
VO
RL
NOTE A: CL includes fixture capacitance.
Figure 1. Slew Rate, Rise/Fall Time,
and Overshoot Test Circuit
2 kΩ
VCC+
VO
VCC–
RS
RS
Overshoot
90%
10%
tr
Figure 2. Rise-Time and Overshoot
Waveform
10 kΩ
VI
100 Ω
VCC+
VCC–
CL
(see Note A)
VO
RL
Figure 3. Noise-Voltage Test Circuit
NOTE A: CL includes fixture capacitance.
Figure 4. Unity-Gain Bandwidth and
Phase-Margin Test Circuit
typical values
Typical values, as presented in this data sheet
represent the median (50% point) of device
parametric performance.
input bias and offset current
Ground Shield
VCC+
pA pA
VCC–
At the picoamp-bias-current level typical of the
TL05x and TL05xA, accurate measurement of the Figure 5. Input-Bias and Offset-Current Test Circuit
bias current becomes difficult. Not only does this
measurement require a picoammeter, but
test-socket leakages easily can exceed the actual device bias currents. To accurately measure these small
currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters
with bias voltages applied, but with no device in the socket. The device then is inserted in the socket, and a
second test that measures both the socket leakage and the device input bias current is performed. The two
measurements then are subtracted algebraically to determine the bias current of the device.
noise
Because of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage
density is sample tested at f = 1 kHz. Texas Instruments also has additional noise-testing capability to meet
specific application requirements. Please contact the factory for details.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
17
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