TJ15P04M Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
TJ15P04M Datasheet PDF : 8 Pages
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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain cut-off current
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
VDS = -40 V, VGS = 0 V
±0.1
µA
-10
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 3)
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
ID = -10 mA, VGS = 0 V
ID = -10 mA, VGS = 10 V
VDS = -10 V, ID = -0.1 mA
VGS = -4.5 V, ID = -7.5 A
-40
V
-30
-0.8
-2.0
37
48
mΩ
VGS = -10 V, ID = -7.5 A
28
36
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
tr
ton
tf
toff
VDS = -10 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min Typ. Max Unit
1100
pF
130
170
11
ns
19
42
170
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Qg
VDD ≈ -32 V, VGS = -10 V, ID = -15 A
26
nC
Qgs1
Qgd
6.7
2.5
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
Diode forward voltage
(Note 4)
IDRP
VDSF
IDR = -15 A, VGS = 0 V
Note 4: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
-45
A
1.2
V
3/8
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