TGA2501 Ver la hoja de datos (PDF) - TriQuint Semiconductor
Número de pieza
componentes Descripción
Fabricante
TGA2501 Datasheet PDF : 11 Pages
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Advance Product Information
April 5, 2006
TGA2501
TABLE I
MAXIMUM RATINGS
Symbol
V+
V-
I+
| IG |
PIN
PD
TCH
TM
TSTG
Parameter 5/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
9V
-5 V to 0 V
2.0 A
52 mA
26 dBm
14.4 W
150 0C
320 0C
-65 to 150 0C
Notes
4/
4/
6/
4/
3/ 4/
1/ 2/
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to
failure (TM). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the
median life is reduced from 1.6E+6 to 5.4E+4 hours.
4/ Combinations of supply voltage, supply current, input power, and output power
shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.
6/ This current can be doubled by applying gate bias to both gate pads.
TABLE II
THERMAL INFORMATION
PARAMETER
Rθjc Thermal Resistance
(Channel to Backside)
TEST CONDITION
VD = 8 V
ID = 1.2 A
PDIS = 9.6 W
TCH (qC)
RTjc MTTF
(qC/W) (HRS)
144.56 7.77 1.6E+6
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70°C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
6
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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