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TEA6886 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
Fabricante
TEA6886 Datasheet PDF : 92 Pages
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SYMBOL
AM PART
mmod
VAMPCAP(AC)
αAMGATE
PARAMETER
trigger threshold
AF voltage at AMHCAP
attenuation of blanking gate
tsup(AMHOLD)
suppression time at AMHOLD
V(AMNCAP)DC
fAMHOLD
detector voltage; Vext(AMNBIN)DC 0.7 V
trigger sensitivity
Ioffset
gate input offset current at pins during
suppression pulse duration
Muting average detector (TMUTE); see Fig.12
Vi(LEVEL)
Gv
VTMUTE
VTMUTE/K
input voltage on LEVEL
voltage gain LEVEL to TMUTE
offset between TMUTE and LEVEL
temperature dependence at TMUTE
MUTING AVERAGE DETECTOR TIME CONSTANT
Ich(TMUTE)
Idch(TMUTE)
VO
TMUTE charge current
TMUTE discharge current
DC output voltage
TEST CONDITION
Ich(test)
capacitor charge current
Idch(test)
capacitor discharge current
AM wideband average detector (TWBAM1); see Fig.6
VTWBAM1
DC voltage at TWBAM1 with respect to
AGND
CONDITIONS
MIN. TYP. MAX. UNIT
140
%
ViAM(mono) = 50 mV (RMS); f = 1 kHz
16 22 30 mV
ViAM(mono) = 50 mV (RMS); gate open: internal
voltage; gate closed: VAMHOLD(DC) = 4 V; note 7
60 70 80 dB
tpulse = 10 µs; repetition rate = 50 Hz; Vpulse = 1.7 V 400 500 600 µs
(AMNBIN); VLEVEL = 0.5 V
VAMNBIN(AC) = 0 V; V(LEVEL)DC = 3.5 V
3
3.5
tpulse = 10 µs; repetition rate = 50 Hz; Vpulse = 1.7 V 45
50
(AMNBIN); VLEVEL = 4 V
during AF suppression time
50 0
4
V
55 Hz
+50 nA
0.5
4
0
1.5
3.3
0.2
0.2
2
5
data byte 6, bit 7 = 1
data byte 6, bit 7 = 1
12
12
VLEVEL(AC) = 400 mV; VLEVEL(DC) = 3.5 V; fi = 24 kHz;
write mode; data byte 1, bits 4 and 5:
AWS1 = 1; AWS0 = 1
AWS1 = 1; AWS0 = 0
AWS1 = 0; AWS0 = 1
AWS1 = 0; AWS0 = 0
4.10
3.60
3.00
2.35
V
dB
V
mV/K
µA
µA
V
µA
µA
V
V
V
V

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