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TEA1118 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
Fabricante
TEA1118
Philips
Philips Electronics Philips
TEA1118 Datasheet PDF : 24 Pages
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Philips Semiconductors
Versatile cordless transmisssion circuit
Product specification
TEA1118; TEA1118A
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Transmit amplifier (pins TX+, TXand GAT)
Zi
input impedance
differential between pins
TX+ and TX
Gvtx
Gvtx(f)
single-ended between pins
TX+/TXand VEE
voltage gain from TX+/TXto LN
gain variation with frequency
referred to 1 kHz
Gvtx(T)
gain variation with temperature
referred to 25 °C
CMRR common mode rejection ratio
Gvtxr
gain voltage reduction range
(TEA1118 only)
VLN(max)
maximum sending signal
(RMS value)
VTX(max)
maximum transmit input voltage
(RMS value)
Vnotx
noise output voltage at pin LN; pins
TX+/TXshorted through 200
VTX = 200 mV (RMS)
f = 300 to 3400 Hz
Tamb = 25 to +75 °C
external resistor connected
between GAT and REG
Iline = 15 mA; THD = 2%
Iline = 4 mA; THD = 10%
Iline = 15 mA; THD = 2%
Iline = 75 mA; THD = 2%
psophometrically weighted
(P53 curve)
10.1
1.4
62.5
36.5
11.3 12.5
±0.2
±0.3
60
6
1.7
0.8
0.45
0.9
84
k
k
dB
dB
dB
dB
dB
V
V
V
V
dBmp
Transmit mute (pin TMUTE; TEA1118A only)
Gvtxm
VIL
VIH
ITMUTE
gain reduction
LOW level input voltage
HIGH level input voltage
input current
Receive amplifier (pins IR, QR and GAR)
Zi
Gvrx
Gvrx(f)
input impedance
voltage gain from IR to QR
gain variation with frequency
referenced to 1 kHz
Gvrx(T)
gain variation with temperature
referenced to 25 °C
Gvrxr
gain voltage reduction range
Vo(rms)
maximum receive signal
(RMS value)
Vnorx(rms)
noise output voltage at pin QR
(RMS value)
TEA1118
TEA1118A
TMUTE = HIGH
input level = HIGH
VIR = 4 mV (RMS)
f = 300 to 3400 Hz
Tamb = 25 to +75 °C
external resistor connected
between GAR and QR
IP = 0 mA sine wave drive;
RL = 150 ; THD = 2%
IP = 0 mA sine wave drive;
RL = 450 ; THD = 2%
IR open-circuit;
RL = 150 ;
psophometrically weighted
(P53 curve)
80
VEE 0.4
VEE + 1.5
1.25
20
29.8
31
±0.2
±0.3
0.25
0.35
89
86
dB
VEE + 0.3 V
VCC + 0.4 V
3
µA
k
32.2
dB
dB
dB
12
dB
V
V
dBVp
dBVp
1997 Jul 14
14

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