TEA1103 Ver la hoja de datos (PDF) - Philips Electronics
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TEA1103 Datasheet PDF : 28 Pages
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Philips Semiconductors
Fast charge ICs for NiCd and NiMH
batteries
Preliminary specification
TEA1103; TEA1103T;
TEA1103TS
SYMBOL
PARAMETER
CONDITIONS
Isource(max) maximum source current
VRFSH(max)
VRFSH(off)
maximum refresh voltage
voltage at pin RFSH when
refresh is off
VIB = 75 mV; VP = 10 V
VRFSH = 2.7 V;
Tamb = 25 °C
IRFSH = 1 mA
Temperature related inputs; pins NTC and MTV
VNTCh
VNTCh(hy)
VNTCl
VNTCl(hy)
VNTC(co)
VNTC(bat)
INTC
VMTV
input voltage at pin NTC for
detecting high temperature
hysteresis of VNTCh
input voltage at pin NTC,
detecting low temperature
hysteresis of VNTCl
input voltage at pin NTC for
detecting temperature cut-off
maximum input voltage at
pin NTC for detecting battery
with NTC
input current at pin NTC
voltage level at pin MTV
pin MTV open-circuit
MTV setting
VNTC = 2 V
default (open-circuit)
∆VNTC/VNTC ∆T/∆t detection level
Voltage regulation
VNTC = 2 V; Tj = 0 to 50 °C
Vreg
TCVreg
gm
regulation voltage
temperature coefficient of
regulation voltage
transconductance of amplifier
A3
NiCd and NiMH;
pin Vstb open-circuit
NiCd and NiMH;
Vstb = 1.5 V
open battery
Vreg = 1.325 V;
Tamb = 0 to 45 °C
Vbat = 1.9 V;
no battery mode
Program pin Vstb
Vstb
Vstb(im)
open voltage at pin Vstb
voltage at pin Vstb for
programming inhibit mode
Vstb(st)
voltage at pin Vstb for
programming voltage
regulation at standby
NiCd and NiMH
Vstb(tc)
voltage at pin Vstb for
NiCd and NiMH
programming trickle charge at
standby
MIN.
1.4
TYP.
2
2.7
−
700
770
0.9
1
0.95MTV MTV
−
80
2.7
2.8
−
75
0.7MTV 0.75MTV
3.22
3.3
−5
−
0.95
1
0.5
−
−
−0.25
1.34
1.325
0.99Vstb Vstb
1.86
1.9
0
±60
−
2.0
1.30
1.325
0
−
1.0
−
2.6
−
MAX. UNIT
2.6
mA
−
V
840
mV
1.1
V
1.05MTV V
−
mV
2.9
V
−
mV
0.8MTV V
3.38
V
+5
µA
1.05
V
2.5
V
−
%
1.40
V
1.01Vstb V
1.94
±120
V
ppm/K
−
mA/V
1.35
V
0.8
V
2.2
V
VS
V
1999 Jan 27
14
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