T2096
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCES
800
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
8
V
Base Current
IB
1
A
DC Collector Current
IC
2
A
Pulse Collector Current (Note 2)
Collector Dissipation
Junction Temperature
Storage Temperature
ICP
4
A
Ta=25℃
Tc=25℃
PC
1
W
15
TJ
150
°C
TSTG
-55 ~ +150
°C
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width ≤300μS, Duty Cycle≤10%
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE 1
hFE 2
fT
Cob
tON
tSTG
tF
TEST CONDITIONS
IC =1mA, IE =0
IC =5mA, RBE=∞
IE =1mA, IC =0
IC =1A, IB =0.2A
IC =1A, IB =0.2A
VCB =400V, IE =0
VEB =5V, IC =0
VCE =5V, IC =1mA
VCE =5V, IC =0.2A
VCE =10V, IC =0.2A
VCB =10V, f =1MHz
IC =1.0A, IB1 =0.05A
IB2 = -0.5A, RL =200Ω
VCC=200V
MIN TYP MAX UNIT
800
V
400
V
8
V
0.8
V
1.5
V
10 μA
10 μA
45
120
180
20
MHz
20
pF
0.5 μs
2.5 μs
0.3 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-017,A