SUP85N15-21 Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

SUP85N15-21

N-Channel 150-V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUP85N15-21

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

2.8

VGS = 10 V

2.4

ID = 30 A

2.0

1.6

1.2

0.8

0.4

0.0

-50 -25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage

100

TJ = 150_C

10

TJ = 25_C

1

0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

1000

Avalanche Current vs. Time

100

10

IAV (A) @ TA = 25_C

1

IAV (A) @ TA = 150_C

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (Sec)

Drain Source Breakdown vs.

Junction Temperature

190

180

ID = 1.0 mA

170

160

150

140

-50 -25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (_C)

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4

Document Number: 72003

S-21715—Rev. A, 07-Oct-02

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