S12NH3LL(2006) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

S12NH3LL
(Rev.:2006)

N-channel 30V - 0.008Ω - 12A - SO-8 Ultra low gate charge STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STS12NH3LL

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test condictions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

30

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16V

±100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250µA

1

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A

VGS= 4.5V, ID= 6A

0.008 0.0105 Ω

0.010 0.013 Ω

Table 4. Dynamic

Symbol

Parameter

Test condictions

Min. Typ. Max. Unit

gfs Forward transconductance VDS =10V, ID = 12A

38

S

Ciss Input capacitance

965

pF

Coss

Crss

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

285

38

pF

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=15V, ID = 12A

VGS =4.5V

(see Figure 7)

9

12 nC

3.7

nC

3

nC

RG Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20mV

0.5 1.5 2.5

Ω

open drain

4/12

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