S12NH3LL(2006) Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

S12NH3LL
(Rev.:2006)

N-channel 30V - 0.008Ω - 12A - SO-8 Ultra low gate charge STripFET™ Power MOSFET

STMicroelectronics 

STS12NH3LL

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VGS(1)

VGS(2)

Drain-source voltage (VGS = 0)

Gate-source voltage

Gate-source voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(3)

Drain current (continuous) at TC=100°C

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

TJ

Operating junction temperature

Tstg

Storage temperature

1. Continuous mode

2. Guaranteed for test time < 15ms

3. Pulse width limited by safe operating area

Table 2. Thermal resistance

Symbol

Parameter

Rthj-amb (1) Thermal resistance junction-ambient

1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec

Electrical ratings

Value

30

± 16

± 18

12

7.5

48

2.5

-55 to 150

Unit

V

V

V

A

A

A

W

°C

Value

50

Unit

°C/W

3/12

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