STPS20L45CT(2002) Ver la hoja de datos (PDF) - STMicroelectronics
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STPS20L45CT Datasheet PDF : 8 Pages
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Fig. 3-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode, TO-220AB, TO-247,
D2PAK).
IM(A)
140
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
STPS20L45CF/CW/CT/CFP/CG
Fig. 3-2: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode, ISOWATT220AB,
TO-220FPAB).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=50°C
Tc=100°C
1E+0
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
TO-247, D2PAK).
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
T
1E-2
tp(s)
1E-1
δ=tp/T
tp
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
2E+2
1E+2
Tj=150°C
1E+1
Tj=125°C
1E+0
1E-1
1E-2
1E-3
0
Tj=75°C
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45
C(pF)
2000
1000
100
1
2
F=1MHz
Tj=25°C
VR(V)
5
10
20
50
3/8
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