STPS10L45CT_07 Ver la hoja de datos (PDF) - STMicroelectronics
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STPS10L45CT_07 Datasheet PDF : 10 Pages
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Characteristics
STPS10L45C
Figure 7.
Relative variation of thermal
Figure 8.
impedance junction to case versus
pulse duration
(TO-220AB, I2PAK and D2PAK)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
tp
1E+0
0.4
δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Figure 9.
IR(mA)
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0
5
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
10
15
20
25
30
35
40
45
1
2
VR(V)
5
10
20
50
Figure 11.
Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 12.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) ( D2PAK)
IFM(A)
100.0
10.0
Tj=150°C
(typical values)
Tj=25°C
Rth(j-a)(°C/W)
80
70
60
50
40
Tj=125°C
30
1.0
20
VFM(V)
0.1
10
S(Cu)(cm²)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
4
8
12
16
20
24
28
32
36
40
4/10
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