STPS10L40CG Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS10L40CG Datasheet PDF : 9 Pages
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Characteristics
STPS10L40C
Figure 7.
Relative variation of thermal
Figure 8.
impedance junction to case versus
pulse duration
(TO-220AB and D2PAK)
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
0.4
δ = 0.2
T
0.2
δ = 0.1
1E-1
δ=tp/T
tp
1E+0
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Figure 9.
IR(mA)
1E+2
1E+1
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Tj=150°C
Tj=100°C
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1E+0
100
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
10
0
5
10
15
20
25
30
35
40
1
2
VR(V)
5
10
20
50
Figure 11.
Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 12.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) ( D2PAK)
IFM(A)
100.0
Tj=150°C
(typical values)
10.0
Tj=125°C
Rth(j-a)(°C/W)
80
70
60
50
40
Tj=25°C
30
1.0
20
VFM(V)
10
S(Cu)(cm²)
0.1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
4
8
12
16
20
24
28
32
36
40
4/9
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