STD8NM50N Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STD8NM50N

N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD8NM50N, STP8NM50N, STU8NM50N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

PTOT

dv/dt (1)

Drain-source voltage

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

Tstg Storage temperature

Tj Max. operating junction temperature

1. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS

Value

500

± 25

5

3

45

15

- 55 to 150

150

Unit

V

V

A

A

W

V/ns

°C

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Rthj-pcb

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Thermal resistance junction-pcb max

Maximum lead temperature for soldering

purpose

DPAK

50

Value

IPAK

2.78

100

Unit

TO-220

°C/W

62.5 °C/W

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2

A

Single pulse avalanche energy

EAS (starting Tj = 25°C, ID = IAR, VDD = 50 V)

140

mJ

Doc ID 17413 Rev 6

3/19

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