ST2342
N Channel Enhancement Mode MOSFET
5.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
VDSS
VGSS
ID
IDM
IS
PD
TJ
20
±12
5.0
4.0
13
1.0
1.25
0.8
150
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
TSTG
RθJA
-55/150
140
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2342 2006. V1