ST2341
P Channel Enhancement Mode MOSFET
-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=-250uA -20
V
VGS(th) VDS=VGS,ID=-250uA -0.35
-0.9 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±20V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VGS=-4.5V,ID=-3.3A
VGS=-2.5V,ID=-2.8A
VGS=-1.8V,ID=-2.3A
VDS=-5V,ID=-4V
±100 nA
-1
-10 uA
-6
A
0.036
0.045
0.055
3.0
S
VSD
IS=-1A,VGS=0V
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V
VGS=-4.5V
ID≣-3.3A
VDS=-6.0V
VGS=0V
F=1MHz
VDD=-6V
RL=6Ω
ID=-1.0A
VGEN=-4.5V
RG=6Ω
8.0 13
1.2
nC
2.2
700
160
pF
120
15 25
35 55
nS
60 90
40 40
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341 2006. Rev.1