SSTA13 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
SSTA13 Datasheet PDF : 2 Pages
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Transistors
NPN small signal transistor
SSTA13
SSTA13
zFeatures
1) High Current Gain.
zDimensions (Unit : mm)
SSTA13
zPackaging specifications
Type
SSTA13
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
30
30
10
0.3
0.2
150
−55 to 125
(1)Emitter
(2)Base
(3)Collector
Unit
V
V
V
A
W
°C
°C
2.9
0.4
(3)
0.95
0.45
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : RIM
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Collector-emitter breakdown voltage BVCES 30
−
Collector-emitter breakdown voltage BVCEO 30
−
Emitter-base breakdown voltage
BVEBO 10
−
Collector-base cutoff current
ICBO
−
−
Emitter-base cutoff current
IEBO
−
−
Collector-emitter saturation voltage VCE(sat) −
−
Base-emitter voltage
VBE(on)
−
−
DC current transfer ratio
5000 −
hFE
10000 −
Transition frequency
fT
125 −
Collector output capacitance
∗ Pulsed
Cob
−
5.4
Max.
−
−
−
0.1
0.1
1.5
2.0
−
−
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
Conditions
IC= 100µA
IC= 10µA
IE= 10µA
VCB= 30V
VEB= 10V
IC/IB= 100mA/ 0.1mA
VCE= 5V, IC= 100mA ∗
VCE= 5V, IC= 10mA
VCE= 5V, IC= 100mA ∗
VCE= 5V, IE= 10mA, f=100MHz
VCB= 10V, f=100kHz, IE=0
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