SST39LF016 Ver la hoja de datos (PDF) - Silicon Storage Technology
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SST39LF016 Datasheet PDF : 26 Pages
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AC CHARACTERISTICS
8 Mbit / 16 Mbit Multi-Purpose Flash
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016
Data Sheet
TABLE 13: READ CYCLE TIMING PARAMETERS
VDD = 3.0-3.6V FOR SST39LF080/016 AND 2.7-3.6V FOR SST39VF080/016
SST39LF080/016-55 SST39VF080/016-70 SST39VF080/016-90
Symbol Parameter
Min
Max
Min
Max
Min
Max Units
TRC
Read Cycle Time
55
70
90
TCE
Chip Enable Access Time
55
70
90
TAA
Address Access Time
55
70
90
TOE
Output Enable Access Time
30
35
45
TCLZ1 CE# Low to Active Output
0
0
0
TOLZ1 OE# Low to Active Output
0
0
0
TCHZ1 CE# High to High-Z Output
15
20
30
TOHZ1 OE# High to High-Z Output
15
20
30
TOH1 Output Hold from Address Change
0
0
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T13.3 396
TABLE 14: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
TWPH1
TCPH1
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
40
ns
30
ns
30
ns
TDS
TDH1
TIDA1
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
30
ns
0
ns
150
ns
TSE
Sector-Erase
25
ms
TBE
Block-Erase
25
ms
TSCE
Chip-Erase
100
ms
T14.0 396
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
12
S71146-03-000 6/01 396
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