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SST36VF1601E Datasheet PDF : 35 Pages
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Data Sheet
AC CHARACTERISTICS
16 Mbit Concurrent SuperFlash
SST36VF1601E / SST36VF1602E
TABLE 13: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
Symbol
Parameter
Min
Max
Units
TRC
Read Cycle Time
70
ns
TCE
Chip Enable Access Time
70
ns
TAA
Address Access Time
70
ns
TOE
Output Enable Access Time
30
ns
TCLZ1
CE# Low to Active Output
0
ns
TOLZ1
OE# Low to Active Output
0
ns
TCHZ1
CE# High to High-Z Output
16
ns
TOHZ1
OE# High to High-Z Output
TOH1
Output Hold from Address Change
0
16
ns
ns
TRP1
RST# Pulse Width
500
ns
TRHR1
TRY1,2
RST# High before Read
RST# Pin Low to Read Mode
50
ns
20
µs
T13.1 1274
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
TABLE 14: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TBP
Program Time
TAS
Address Setup Time
TAH
Address Hold Time
10
µs
0
ns
40
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
TCP
CE# Pulse Width
40
TWP
WE# Pulse Width
40
TWPH1
WE# Pulse Width High
30
TCPH1
CE# Pulse Width High
30
TDS
Data Setup Time
30
TDH1
Data Hold Time
0
TIDA1
Software ID Access and Exit Time
TSE
Sector-Erase
ns
ns
ns
ns
ns
ns
ns
150
ns
25
ms
TBE
TSCE
TES
TBY1,2
TBR1
Block-Erase
Chip-Erase
Erase-Suspend Latency
RY/BY# Delay Time
Bus Recovery Time
25
ms
50
ms
10
µs
90
ns
0
µs
T14.1 1274
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
©2005 Silicon Storage Technology, Inc.
18
S71274-03-000
11/05
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