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SSM-2220 Ver la hoja de datos (PDF) - Analog Devices

Número de pieza
componentes Descripción
Fabricante
SSM-2220
ADI
Analog Devices ADI
SSM-2220 Datasheet PDF : 12 Pages
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Data Sheet
SSM2220
SPECIFICATIONS
TA = 25°C, unless otherwise noted.
Table 1.
Parameter
CURRENT GAIN1
Current Gain Matching2
NOISE VOLTAGE DENSITY3
OFFSET VOLTAGE4
Offset Voltage Change vs. Collector Voltage
Offset Voltage Change vs. Collector Current
OFFSET CURRENT
COLLECTOR TO BASE LEAKAGE CURRENT
BULK RESISTANCE
COLLECTOR SATURATION VOLTAGE
Symbol Min Typ Max Unit
Test Conditions/Comments
hFE
VCB = 0 V to 36 V
80 165
IC = 1 mA
70 150
IC = 100 μA
60 120
IC = 10 μA
ΔhFE
0.5 6
%
IC = 100 μA, VCB = 0 V
en
IC = 1 mA, VCB = 0 V
0.8 2
nV/√Hz fO = 10 Hz
0.7 1
nV/√Hz fO = 100 Hz
0.7 1
nV/√Hz fO = 1 kHz
0.7 1
nV/√Hz fO = 10 kHz
VOS
40
200 μV
VCB = 0 V, IC = 100 μA
ΔVOS/ΔVCB
11
200 μV
IC = 100 μA, VCB1 = 0 V, VCB2 = −36 V
ΔVOS/ΔIC
12
75 μV
VCB = 0 V, IC1 = 10 μA, IC2 = 1 mA
IOS
6
45 nA
IC = 100 μA, VCB = 0 V
ICBO
50
400 pA
VCB = −36 V = VMAX
rBE
0.3 0.75 Ω
VCB = 0 V, 10 μA ≤ IC ≤ 1 mA
VCE(SAT)
0.026 0.1 V
IC = 1 mA, IB = 100 μA
1 Current gain is measured at collector to base voltages (VCB) swept from 0 V to VMAX at indicated collector current. Typicals are measured at VCB = 0 V.
2 Current gain matching (ΔhFE) is defined as follows:
ΔhFE = 100(I B )(hFE )min
IC
3 Sample tested. Noise tested and specified as equivalent input voltage for each transistor.
4 Offset voltage is defined as follows:
VOS = VBE1 VBE2 =
KT
q
ln
IC1
IC2

where VOS is the differential voltage for IC1 = IC2.
ELECTRICAL CHARACTERISTICS
−40°C ≤ TA ≤ +85°C, unless otherwise noted.
Table 2.
Parameter
CURRENT GAIN
OFFSET VOLTAGE
Offset Voltage Drift1
OFFSET CURRENT
BREAKDOWN VOLTAGE (COLLECTOR TO EMITTER)
Symbol
hFE
VOS
TCVOS
IOS
BVCEO
Min Typ
60 125
50 105
40 90
30
0.3
10
36
Max Unit
265 μV
1.0 μV/°C
200 nA
V
Test Conditions/Comments
VCB = 0 V to 36 V
IC = 1 mA
IC = 100 μA
IC = 10 μA
IC = 100 μA, VCB = 0 V
IC = 100 μA, VCB = 0 V
IC = 100 μA, VCB = 0 V
1 Guaranteed by VOS test (TCVOS = VOS/T for VOS << VBE), where T = 298K for TA = 25°C.
Rev. C | Page 3 of 12

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