SSF2316E Ver la hoja de datos (PDF) - Silikron Semiconductor Co.,LTD.
Número de pieza
componentes Descripción
Fabricante
SSF2316E Datasheet PDF : 5 Pages
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Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
gFS
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
VDS=20V,VGS=0V
VGS=±8V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=4A
VGS=4V, ID=4A
VGS=3.1V, ID=4A
VGS=2.5V, ID=2A
VDS=10V,ID=3.5A
VDS=8V,VGS=0V,
F=1.0MHz
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
VDS=10V,ID=7A,
VGS=4.5V
VGS=0V,IS=7A
SSF2316E
1
μA
±10
μA
0.5
1.3
V
17
23
mΩ
18
24
mΩ
20
30
mΩ
24
35
mΩ
11
S
900
PF
350
PF
150
PF
15
nS
100
nS
60
nS
90
nS
20
nC
2.5
nC
3
nC
0.83
1.2
V
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