SSF2306B Ver la hoja de datos (PDF) - Silikron Semiconductor Co.,LTD.
Número de pieza
componentes Descripción
Fabricante
SSF2306B Datasheet PDF : 5 Pages
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SSF2306B
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
0.5
1.2
V
VGS=2.5V, ID=2.6A
50
mΩ
VGS=4.5V, ID=5A
40
mΩ
VGS=10V, ID=5A
35
mΩ
VDS=5V,ID=5A
13
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
660 1050
PF
90
PF
70
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t d(on)
6
nS
tr
VDS=15V,ID=5A
20
nS
VGS=10V,RGEN=3.3Ω
td(off)
RD=3Ω
20
nS
tf
3
nS
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
VDS=16V,ID=5A,VGS=4.5V
8.5
15
nC
1.5
nC
3.2
nC
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.2A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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