SP000216325(2009) Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

SP000216325
(Rev.:2009)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP15N60C3, SPI15N60C3

SPA15N60C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

VDS @ Tjmax

RDS(on)

ID

• Periodic avalanche rated

PG-TO220FP PG-TO262

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

3

12

P-TO220-3-31

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

650 V

0.28 Ω

15 A

PG-TO220

Type

SPP15N60C3

SPI15N60C3

SPA15N60C3

Package

PG-TO220

PG-TO262

PG-TO220FP

Ordering Code

Q67040-S4600

Q67040-S4601

SP000216325

Marking

15N60C3

15N60C3

15N60C3

Maximum Ratings

Parameter

Symbol

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID=7.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=15A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage static

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25°C

Operating and storage temperature

Reverse diode dv/dt 6)

ID

ID puls

EAS

EAR

IAR

VGS

VGS

Ptot

Tj , Tstg

dv/dt

Value

SPP_I

SPA

15

151)

9.4

9.41)

45

45

460

460

Unit

A

A

mJ

0.8

0.8

15

15

±20

±20

±30

±30

156

34

-55...+150

15

A

V

W

°C

V/ns

Rev. 3.2

page 1

2009-12-22

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