2N03L03 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
2N03L03 Datasheet PDF : 8 Pages
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13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω
850
mJ
700
600
500
400
300
200
100
0
25 45 65 85 105 125 145 °C 185
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
36 SPP80N03S2L-03
V
SPI80N03S2L-03
SPP80N03S2L-03,SPB80N03S2L-03
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 80 A pulsed
SPP80N03S2L-03
16
V
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0
40
80 120 160 200 nC 260
QGate
34
33
32
31
30
29
28
27
-60 -20 20 60 100 140 °C 200
Tj
Page 7
2003-05-09
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