MX29F001BPC-90 Ver la hoja de datos (PDF) - Macronix International

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componentes Descripción

Fabricante

MX29F001BPC-90

1M-BIT [128K x 8] CMOS FLASH MEMORY

Macronix International 

READ TIMING WAVEFORMS

VIH

A0~16

VIL

VIH

CE

VIL

WE

VIH

VIL

OE

VIH

VIL

DATA

Q0~7

VOH HIGH Z

VOL

MX29F001T/B

ADD Valid

tCE

tOE

tACC

tDF

tOH

DATA Valid

HIGH Z

COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION

DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%(VCC = 5V ± 5% for 29F001T/B-55)

SYMBOL

PARAMETER

MIN.

TYP

MAX.

UNIT CONDITIONS

ICC1 (Read) Operating VCC Current

30

mA IOUT=0mA, f=5MHz

ICC2

50

mA IOUT=0mA, F=10MHz

ICC3 (Program)

50

mA In Programming

ICC4 (Erase)

50

mA In Erase

ICCES

VCC Erase Suspend Current

2

mA CE=VIH, Erase Suspended

NOTES:

1. VIL min. = -0.6V for pulse width < 20ns.

2. If VIH is over the specified maximum value, programming

operation cannot be guranteed.

3. ICCES is specified with the device de-selected. If the device

is read during erase suspend mode, current draw is the sum

of ICCES and ICC1 or ICC2.

4. All current are in RMS unless otherwise noted.

P/N: PM0515

REV. 2.1, JUN. 14, 2001

15

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