SGS6N60 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SGS6N60 Datasheet PDF : 7 Pages
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200
Common Emitter
VCC = 300V, VGE = ± 15V
100
R
G
=
80Ω
TC = 25℃
TC = 125℃
Eon
Eon
Eoff
10
Eoff
5
1
2
3
4
5
6
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
100
Ω
Tc = 25℃
12
9
300 V
6
VCC = 100 V
200 V
3
0
0
3
6
9
12
15
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
100
Ic MAX. (Pulsed)
10
Ic MAX. (Continuous)
1
50us
100us
1㎳
DC Operation
0.1 Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linerarly with increase
in temperature
0.01
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
50
10
1
0.1
1
Safe Operating Area
VGE=20V, TC=100oC
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
0.5
0.2
1
0.1
0.05
0.02
0.1 0.01
single pulse
0.01
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2001 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGS6N60UF Rev. A
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