SFH636-X007 Ver la hoja de datos (PDF) - Vishay Semiconductors
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Fabricante
SFH636-X007
Vishay Semiconductors
SFH636-X007 Datasheet PDF : 8 Pages
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SFH636
Vishay SemiconductorsOptocoupler, High Speed Phototransistor Output,
1 Mbd,
10 kV/ms CMR, Split Collector Transistor Output
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
16
mA
14
I0 12
10
8
6
4
2
VCC = 5.0 V 40 mA
35 mA
30 mA
25 mA
20 mA
15 mA
10 mA
5 mA
0
0 2 4 6 8 10 12 V 16
V0
isfh636_05
Fig. 5 - Output Characteristics-Output Current vs. Output Voltage
102
101
100
10-1
10-2
10-3
0
isfh636_08
1.2 1.3 1.4 1.5 1.6
VF/V
Fig. 8 - Forward Current of Emitting Diode vs. Forward Voltage
40
mA
35
IF
30
25
20
15
10
5
0
0
isfh636_06
10 20 30 40 50 60 70 80 ºC 100
TA
Fig. 6 - Permissible Forward Current of Emitting Diode vs.
Ambient Temperature
0.50
%
0.45
IO 0.40
IF 0.35
0.30
VCC = 5.0 V
0.25
0.20
0.15
0.10
0.05
0
- 60 - 40 - 20 0
isfh636_09
20 40 60 ºC 100
TA
Fig. 9 - Small Signal Transfer Ratio vs. Forward Current
120
mW
100
Ptot
80
Detector
60
Emitter
40
20
0
0
isfh636_07
10 20 30 40 50 60 70 80 90 100
TA
Fig. 7 - Permissible Total Power Dissipation vs.
Ambient Temperature
1.3
1.2
NCTR
1.1
6N 135
6N 136
1.0
0.9
0.8
IF = 16 mA,
VO = 0.4 V,
0.7
VCC = 5.0 V
0.6
- 60 - 40 - 20 0
isfh636_10
20 40 60 ºC 100
TA
Fig. 10 - Current Transfer Ratio (Normalized) vs.
Ambient Temperature
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4
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83681
Rev. 1.6, 11-Jan-08
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