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SD125SA60C

SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 °C TJ Operation)

Sensitron 

SENSITRON

SEMICONDUCTOR

SD125SA60A/B/C

Technical Data

Data Sheet 4945, Rev. A

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop (150 °C TJ Operation)

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

• Soft Reverse Recovery at Low and High Temperature

• Very Low Forward Voltage Drop

• Low Power Loss, High Efficiency

• High Surge Capacity

• Guard Ring for Enhanced Durability and Long Term Reliability

• Guaranteed Reverse Avalanche Characteristics

• Electrically / Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Peak Inverse Voltage

Max. Average Forward

Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

Repetitive Avalanche Current

Max. Junction Temperature

Max. Storage Temperature

Symbol

VRWM

IF(AV)

IFSM

Condition

-

50% duty cycle, rectangular

wave form

8.3 ms, half Sine wave (1)

EAS

TJ = 25 °C, IAS = 2.0 A,

L = 6.5 mH

IAR

IAS decay linearly to 0 in 1 µs

ƒ limited by TJ max VA=1.5VR

TJ

-

Tstg

-

Max.

60

15

280

13.0

3.0

-65 to +150

-65 to +150

Units

V

A

A

mJ

A

°C

°C

Electrical Characteristics(1):

Characteristics

Max. Forward Voltage Drop

Max. Reverse Current

Max. Junction Capacitance

(1) in SHD package

Symbol

VF1

VF2

IR1

IR2

CT

Condition

@ 15A, Pulse, TJ = 25 °C

@ 15A, Pulse, TJ = 125 °C

@VR = 60V, Pulse,

TJ = 25 °C

@VR = 60V, Pulse,

TJ = 125 °C

@VR = 5V, TC = 25 °C

fSIG = 1MHz,

VSIG = 50mV (p-p)

Max.

0.56

0.51

2.0

140

800

Units

V

V

mA

mA

pF

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