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S9015M

WBFBP-03B Plastic-Encapsulate PNP Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors

S9015M TRANSISTOR

DESCRIPTION

PNP Epitaxial Silicon Transistor

FEATURES

High hFE and good linearity

Complementary to S9014M

APPLICATION

Low Frequency, Low Noise Amplifier

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM,Note book PC, etc.)

MARKING: M7

C

C

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

TOP

BE

1. BASE

2. EMITTER

3. COLLECTOR

BACK

C

C

EB

M7

BE

MAXIMUM RATINGS TA=25℃ unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

PC

Collector Dissipation

TJ

Junction Temperature

Tstg

Storage Temperature

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless

otherwise

Value

-50

-45

-5

-0.1

0.15

150

-55-150

specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

Cobo

NF

Test conditions

IC= -100μA, IE=0

IC= -0.1mA, IB=0

IE=-100μA, IC=0

VCB=-50 V , IE=0

VEB= -5V , IC=0

VCE=-5V, IC= -1mA

IC=-100 mA, IB= -10mA

IC=-100 mA, IB=-10mA

VCE=-5V, IC= -10mA

f=30MHz

VCB=-10V,IE=0,f=1MHz

VCE=-5V,Ic=-0.2mA,

f=1KHz,RS=2KΩ

MIN

-50

-45

-5

200

150

TYP

Units

V

V

V

A

W

℃

℃

MAX

-0.1

-0.1

1000

-0.3

-1

UNIT

V

V

V

μA

μA

V

V

MHz

7

pF

6

dB

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