S3C7335 Ver la hoja de datos (PDF) - Samsung

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S3C7335

The S3C7335 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47

Samsung 

ELECTRICAL DATA

S3C7335/P7335

Table 17-6. A.C. Electrical Characteristics (Concluded)

(TA = – 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)

Parameter

Instruction cycle

time (1)

TCL0 input

frequency

TCL0 input high,

low width

SCK cycle time

SCK high, low

width

SI setup time to

SCK high

SI hold time to

SCK high

Output delay for

SCK to SO

Symbol

tCY

Conditions

VDD = 2.7 V to 5.5 V

VDD = 1.8 V to 5.5 V

With subsystem clock (fxt)

fTI

VDD = 2.7 V to 5.5 V

tTIH, tTIL

VDD = 1.8 V to 5.5 V

VDD = 2.7. V to 5.5 V

tKCY

tKH, tKL

tSIK

tKSI

tKSO

VDD = 1.8. V to 5.5 V

VDD = 2.7 V to 5.5 V

External SCK source

Internal SCK source

VDD = 1.8 V to 5.5 V

External SCK source

Internal SCK source

VDD = 2.7 V to 5.5 V

External SCK source

Internal SCK source

VDD = 1.8 V to 5.5 V

External SCK source

Internal SCK source

External SCK source

Internal SCK source

External SCK source

Internal SCK source

VDD = 2.7 V to 5.5 V

External SCK source

Internal SCK source

VDD = 1.8 V to 5.5 V

External SCK source

Internal SCK source

Min

Typ

0.67

–

1.3

–

114

122

0

–

0.48

–

1.8

800

–

650

3200

3800

400

–

tKCY/2- 50

1600

tKCY/2-150

100

–

150

400

–

400

–

–

Max Units

64

µs

64

125

1.5 MHz

1

–

µs

–

ns

–

–

–

300

250

1000

1000

NOTE: Unless otherwise specified, Instruction Cycle Time condition values assume a main system clock/4 (fx/4) source.

17-10

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