GS74104J-12 Ver la hoja de datos (PDF) - Giga Semiconductor

Número de pieza

componentes Descripción

Fabricante

GS74104J-12

1M x 4 4Mb Asynchronous SRAM

Giga Semiconductor 

Capacitance

Parameter

Input Capacitance

Output Capacitance

Symbol

CIN

COUT

Test Condition

VIN = 0 V

VOUT = 0 V

Notes:

1. Tested at TA = 25°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested.

DC I/O Pin Characteristics

Parameter

Symbol

Input Leakage

Current

IIL

Output Leakage

Current

ILO

Output High Voltage

VOH

Output Low Voltage

VOL

Test Conditions

VIN = 0 to VDD

Output High Z

VOUT = 0 to VDD

IOH = –4mA

ILO = +4mA

Max

5

7

Min

– 1 uA

–1 uA

2.4

—

Unit

pF

pF

Max

1 uA

1 uA

—

0.4 V

GS74104TP/J

Rev: 1.07 1/2001

4/12

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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