MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
s ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Limits
Typ.
Max.
Sector Erase Time
—
1
8
Word Programming Time
Byte Programming Time
—
16
200
—
8
150
Chip Programming Time
—
8.4
20
Erase/Program Cycle
100,000
—
—
Unit
Comments
sec
Excludes 00H programming
prior to erasure
µs Excludes system-level
µs overhead
sec
Excludes system-level
overhead
cycles
s TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
s SOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ.
Max.
Unit
8
10
pF
8
10
pF
8.5
12.5
pF
Typ.
Max.
Unit
8
10.5
pF
8
10
pF
8.5
12.5
pF
44