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RT8015 Ver la hoja de datos (PDF) - Richtek Technology

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RT8015 Datasheet PDF : 15 Pages
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RT8015
Efficiency Considerations
The efficiency of a switching regulator is equal to the output
power divided by the input power times 100%. It is often
useful to analyze individual losses to determine what is
limiting the efficiency and which change would produce
the most improvement. Efficiency can be expressed as :
Efficiency = 100% (L1+ L2+ L3+ ...) where L1, L2, etc.
are the individual losses as a percentage of input power.
Although all dissipative elements in the circuit produce
losses, two main sources usually account for most of the
losses: VDD quiescent current and I2R losses.
The VDD quiescent current loss dominates the efficiency
loss at very low load currents whereas the I2R loss
dominates the efficiency loss at medium to high load
currents. In a typical efficiency plot, the efficiency curve
at very low load currents can be misleading since the
actual power lost is of no consequence.
1. The VDD quiescent current is due to two components :
the DC bias current as given in the electrical characteristics
and the internal main switch and synchronous switch gate
charge currents. The gate charge current results from
switching the gate capacitance of the internal power
MOSFET switches. Each time the gate is switched from
high to low to high again, a packet of charge Q moves
from VDD to ground. The resulting Q/t is the current out
of VDD that is typically larger than the DC bias current. In
continuous mode, IGATECHG= f(QT+QB) where QT and QB
are the gate charges of the internal top and bottom
switches.
Both the DC bias and gate charge losses are proportional
to VDD and thus their effects will be more pronounced at
higher supply voltages.
2. I2R losses are calculated from the resistances of the
internal switches, RSW and external inductor RL. In
continuous mode the average output current flowing
through inductor L is choppedbetween the main switch
and the synchronous switch. Thus, the series resistance
looking into the LX pin is a function of both top and bottom
MOSFET RDS(ON) and the duty cycle (D) as follows :
RSW = RDS(ON)TOP x D + RDS(ON)BOT x (1"D) The RDS(ON)
for both the top and bottom MOSFETs can be obtained
from the Typical Performance Characteristics curves. Thus,
to obtain I2R losses, simply add RSW to RL and multiply
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the result by the square of the average output current.
Other losses including CIN and COUT ESR dissipative
losses and inductor core losses generally account for less
than 2% of the total loss.
Checking Transient Response
The regulator loop response can be checked by looking
at the load transient response. Switching regulators take
several cycles to respond to a step in load current. When
a load step occurs, VOUT immediately shifts by an amount
equal to ILOAD(ESR), where ESR is the effective series
resistance of COUT. ILOAD also begins to charge or
discharge COUT generating a feedback error signal used
by the regulator to return VOUT to its steady-state value.
During this recovery time, VOUT can be monitored for
overshoot or ringing that would indicate a stability problem.
The COMP pin external components and output capacitor
shown in Typical Application Circuit will provide adequate
compensation for most applications.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum operation junction temperature 125° C.
The maximum power dissipation depends on the thermal
resistance of IC package, PCB layout, the rate of
surroundings airflow and temperature difference between
junctions to ambient. The maximum power dissipation can
be calculated by following formula:
PD(MAX) = ( TJ(MAX) TA ) / θJA
Where TJ(MAX) is the maximum operation junction
temperature 125°C, TA is the ambient temperature and the
θJA is the junction to ambient thermal resistance.
For recommended operating conditions specification of
RT8015, where TJ(MAX) is the m aximum junction
temperature of the die (125°C) and TA is the maximum
ambient temperature. The junction to ambient thermal
resistance for SOP-8 (Exposed Pad) package is 75°C/W
on the standard JEDEC 51-7 (4 layers, 2S2P) thermal
test board. The copper thickness is 2oz. The maximum
power dissipation at TA = 25°C can be calculated by
following formula:
PD (MAX) = (125°C 25°C) / (75°C/W) = 1.33W (SOP-8
Exposed Pad on the minimum layout)
DS8015-03 March 2011

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